| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which can be increased in line memory capacity to improve the quality of images without increasing the power consumption. SOLUTION: In this CCD solid-state imaging device having a line memory, the depth of a potential barrier which determines the capacity of the line memory is made shallower than that of a potential barrier formed in a transfer channel for transferring the electric charge accumulated in the line memory in a predetermined direction. COPYRIGHT: (C)2007,JPO&INPIT
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