Page access circuit of semiconductor memory device

摘要

A page access circuit of a semiconductor memory device comprises a page address detecting unit configured to detect transition of a page address in response to a page address control signal so as to generate a page address detecting signal, a page control unit configured to control the page address control signal depending on transition of a sense detecting signal for notifying end of operation of a bit line sense amplifier, and a column control unit configured to generate a column selecting signal in response to the page address control signal when the page address detecting signal is activated.