发明名称 |
Transition areas for dense memory arrays |
摘要 |
A non-volatile memory chip has word lines spaced a sub-F (sub-minimum feature size F) width apart with extensions of the word lines in at least two transition areas. Neighboring extensions are spaced at least F apart. The present invention also includes a method for word-line patterning of a non-volatile memory chip which includes generating sub-F word lines with extensions in transition areas for connecting to peripheral transistors from mask generated elements with widths of at least F.
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申请公布号 |
US2007120180(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20060604029 |
申请日期 |
2006.11.24 |
申请人 |
EITAN BOAZ;IRANI RUSTOM;SHAPPIR ASSAF |
发明人 |
EITAN BOAZ;IRANI RUSTOM;SHAPPIR ASSAF |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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