TRANSPARENT OXIDE SEMICONDUCTOR JUNCTION

摘要

Disclosed is a semiconductor junction comprising a glass substrate having a relatively low heat resistance or a plastic substrate and a p-type transparent oxide having a high visible light transmission property coated on the substrate. The semiconductor junction is characterized in that CuCrO₂ is coated on the glass substrate or the plastic substrate at a temperature lower than 400°C as the p-type oxide thin film. In place of CuCrO₂, Cu(Cr,M)O₂ may be used which has such a structure that Cu in the CuCrO₂ is partly substituted by at least one element selected from bivalent cations M=Mg, Ca, Be, Sr, Ba, Zn, Cd, Fe and Ni.