| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality semiconductor light emitting element in which current concentration is suppressed. <P>SOLUTION: A semiconductor light emitting element 100 comprises an n-type compound semiconductor layer 103, an active layer 105 and a p-type compound semiconductor layer 107 which are sequentially laminated on a substrate 101, a p-side electrode 120 which is formed on the p-type compound semiconductor layer, and an n-side electrode 130 which is formed in the upper surface of a part of the n-type compound semiconductor layer in which mesa etching is carried out. In the n-type compound semiconductor layer, trenches 140, 150 and 160 are formed for preventing current concentration. The trenches are extended from the upper surface of the part of the n-type compound semiconductor layer in which mesa etching is carried out, or the lower surface of the substrate; and pass through a part of the depth of the n-type compound semiconductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
