| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high open circuit voltage by enhancing energy conversion efficiency. <P>SOLUTION: A semiconducting crystal layer 13 is a porous semiconductor layer where a semiconductor crystal was formed as a columnar structure growing from an anode side transparent electrode layer 12 to the substrate in the vertical direction. The diameter of the columnar structure in the porous semiconductor layer is smaller than 350 nm and greater than 50 nm, a gap between adjacent columnar structures is smaller than 30 nm and greater than 2 nm, and there are 40-70 columnar structures per 1 μm<SP>2</SP>. In addition, the semiconducting crystal layer 13 is a metal oxide, and known oxide semiconductors such as for example, titanic oxide, ZnO, SnO<SB>2</SB>etc. can be used without limitation. In this embodiment, titanic oxide is used as the metal oxide. <P>COPYRIGHT: (C)2007,JPO&INPIT |
