| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having improved operation characteristics, and a semiconductor device manufactured by this method. SOLUTION: A manufacturing method of a semiconductor device is provided, including: forming an NMOS transistor on a substrate; forming a first inter-layer insulating film on the NMOS transistor; and dehydrogenating the first inter-layer insulating film. Dehydrogenating changes a stress of the first inter-layer insulating film. Particularly, after dehydrogenating the first inter-layer insulating film, a tensile stress of 200 MPa or more is exhibited. The semiconductor device including a dehydrogenated inter-layer insulating film is also provided. COPYRIGHT: (C)2007,JPO&INPIT |
