| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory that can be integrated highly. SOLUTION: The ferroelectric memory 1 has a ferroelectric layer 6 mainly composed of a ferroelectric material, and records data by applying voltage to the ferroelectric layer 6 and changing the polarized state in the ferroelectric layer 6. In the ferroelectric layer 6, the film thickness differs continuously or stepwise depending on regions where voltage is applied, the value of voltage applied to the ferroelectric layer 6 is selected from continuous or stepwise voltage values corresponding to the range of the film thickness of the ferroelectric layer 6, and continuous information or stepwise multivalued information is recorded. COPYRIGHT: (C)2007,JPO&INPIT
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