Method for testing transistors having an active region that is common with other transistors and a testing circuit for accomplishing the same

摘要

The present invention provides a method for testing an electrical property of one or more functionally separate transistors located within an active region that is common with other transistors, a method for characterizing the leakage current of at least one of a plurality of functionally separate transistors located in a common active region of a circuit, and a test structure for testing one or more functionally separate transistors located within a common active region. The method for testing the electrical property, among other steps, includes providing a pair of functionally separate transistors ( 110 ) located within a common active region, and biasing a terminal ( 135 ) between the pair ( 110 ) relative to gates ( 125, 155 ) of the pair ( 110 ) and terminals ( 130, 160 ) outlying the pair ( 110 ) to obtain a leakage current associated with the pair ( 110 ).