发明名称 |
Hochspannungstransistorstruktur für eine Halbleitervorrichtung sowie Verfahren zu deren Herstellung |
摘要 |
The present invention discloses a structure of a transistor in a semiconductor device and a method of manufacturing the same. The present invention manufactures a high voltage transistor by etching a silicon substrate to a depth deeper than that of the field oxide film by a self-aligned wet etching process using the field oxide film as a mask and, thereafter, by forming the first gate electrode which electrically switches ON and OFF between the source region and the drain region by using a gate electrode mask and simultaneously forming a second gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film. Accordingly, the present invention can improve the degree of integration of the device by forming a gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film. |
申请公布号 |
DE19521469(B4) |
申请公布日期 |
2007.05.31 |
申请号 |
DE1995121469 |
申请日期 |
1995.06.13 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO. LTD. |
发明人 |
AHN, BYUNG JIN |
分类号 |
H01L29/78;H01L21/336;H01L27/108;H01L27/115;H01L29/06;H01L29/40;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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