Method of making a planar structure containing MOS and bipolar transistors

摘要

A highly planarized integrated circuit structure having at least one bipolar device and at least one MOS device is described as well as a method of making the structure. The structure comprises a substrate having a field oxide grown thereon with portions defined therein respectively for formation of a collector region and a base/emitter region for a bipolar device and a source/gate/drain region for an MOS device. All of the contacts of the devices are formed using polysilicon which fills the defined portions in the field oxide resulting in the highly planarized structure.