发明名称 METHOD FOR MANUFACTURING CAPACITOR, MEMORY CELL AND DYNAMIC RANDOM ACCESS MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reliable capacitor free from defects due to a deep hole formed like a bore. <P>SOLUTION: This method for manufacturing the capacitor comprises the step (1) that an interlayer insulating film 306 is deposited on a plug 301 to be connected to a switch element 10, the step (2) that a deep hole 600 is created on the interlayer insulating film 306 in a way that the surface of the plug 301 is exposed, the step (3) that an overhung structure 601 formed at the opening of the deep hole 600 in the above step (2) is removed, the step (4) that a lower electrode 307 is formed in the inside of the deep hole 600, the step (5) that a dielectric body 308 is formed on the surface 307 of the lower electrode, and the step (6) that an upper electrode 309 is formed on the surface of the dielectric body. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007134654(A) 申请公布日期 2007.05.31
申请号 JP20050328996 申请日期 2005.11.14
申请人 ELPIDA MEMORY INC 发明人 IKEDA NORIAKI
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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