| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor growth substrate using a gallium oxide substrate where a buffer layer preferable for growth of the nitride semiconductor is formed in the surface orientation other than the surface orientation (0001), and also to provide a manufacturing method of the same nitride semiconductor growth substrate. <P>SOLUTION: The nitride semiconductor growth substrate comprises a gallium oxide substrate, and a buffer layer of the nitride semiconductor which is formed on the gallium oxide substrate in the predetermined surface orientation with hydrogen carrier under the growth temperature condition of 600°C or lower. Accordingly, since the nitride semiconductor grown on the buffer layer can be formed with small polarization or without polarization, the nitride semiconductor growth substrate suitable for formation of a light emitting element assuring higher light emitting efficiency and the manufacturing method of the same substrate can be realized. <P>COPYRIGHT: (C)2007,JPO&INPIT |
