| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method which can obtain a trench having a good shape and considerable depth, quickly forms a trench, and whose etching characteristic does not change even if the number of pieces to be treated increases. SOLUTION: The dry etching method makes an etching gas in a state of plasma, and etches a substance 200 composed of Si in a treatment chamber 110 as shown in Fig. 1. The method includes: (a) process of introducing a first etching gas which contains a fluorine compound gas, oxygen, and a rare gas, into the treatment chamber and etching the substance to be treated; (b) process of introducing a second etching gas which contains a fluorine compound gas and oxygen, and may contains a rare gas less than that of the first etching gas, into the treatment chamber, and etching the substance to be treated; and (c) a process of repeating (a) process and (b) process alternately desired times. COPYRIGHT: (C)2007,JPO&INPIT
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