SOLID STATE IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the degradation of the characteristics of a peripheral circuit in a CMOS image sensor using an N/P+substrate. SOLUTION: A deep p-well 13' is formed, e.g. in an n-type epitaxial layer 23 corresponding to a peripheral circuit analog region 13 wherein an analog peripheral circuit is formed. This p-well 13' is connected to a p-type semiconductor substrate 22 via a p-well 25 in order to be at the stable zero potential. Similarly, a deep p-well 14' is formed in the n-type epitaxial layer 23 corresponding to a peripheral circuit logic region 14 wherein a logic peripheral circuit is formed. This p-well 14' is connected to the p-type semiconductor substrate 22 via the p-well 25 in order to be at the stable zero potential. COPYRIGHT: (C)2007,JPO&INPIT