| 摘要 |
PROBLEM TO BE SOLVED: To obtain the forming method of a copper wiring capable of sufficiently suppressing the generation of failure of Cu (copper) film at a low cost without necessitating any complex process. SOLUTION: The forming method of Cu wiring comprises a process for forming a Cu film on a wafer through plating, a process for applying anticorrosive treatment on the surface of the Cu film, and a process for annealing the Cu film after applying the anticorrosive treatment. In another way, the wafer can be stored in non-oxidizing atmosphere after applying the plating. COPYRIGHT: (C)2007,JPO&INPIT
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