发明名称 |
Semiconductor Device Having Enhanced Photo Sensitivity and Method for Manufacture Thereof |
摘要 |
Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
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申请公布号 |
US2007120160(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20070627883 |
申请日期 |
2007.01.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU TZU-HSUAN;YAUNG DUN-NIAN;WUU SHOU-GWO;CHIEN HO-CHING;TSENG CHIEN-HSIEN;LIN JENG-SHYAN |
分类号 |
H01L31/113;H01L29/84 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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