发明名称 SYSTEM AND METHOD FOR CONTROLLING NANOSTRUCTURE GROWTH
摘要 Systems and methods are provided for limiting the growth of nanostructures (201), such as nanotubes, from a catalyst layer (102). More particularly, systems and methods are provided for growing nanostructures from the periphery of a catalyst layer. In certain embodiments, a catalyst layer from which nanostructures can be grown during a growth process, such as CVD or PECVD, is located on a substrate (101). The catalyst layer is covered with a covering layer (103) such that the catalyst layer is sandwiched between the substrate and the covering layer. The resulting structure then undergoes a nanostructure growth process. Because the catalyst layer is sandwiched between the substrate and the covering layer, growth of nanostructures is limited to growth from nanoparticles (10) located on the periphery of the catalyst layer. Thus, growth of nanostructures does not result from nanoparticles (11) located in an interior region of the catalyst layer.
申请公布号 WO2007018554(A3) 申请公布日期 2007.05.31
申请号 WO2005US32183 申请日期 2005.09.08
申请人 AGILENT TECHNOLOGIES, INC. 发明人 KOPLEY, THOMAS, E.;MOLL, NICHOLAS, J.;LU, JENNIFER;YI, SUNGSOO
分类号 D01F9/12 主分类号 D01F9/12
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