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发明名称
METHOD FOR FORMING OF GATE ELECTRODE IN SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20070055879(A)
申请公布日期
2007.05.31
申请号
KR20050114365
申请日期
2005.11.28
申请人
HYNIX SEMICONDUCTOR INC.
发明人
YOO, MYOUNG SUL
分类号
H01L27/115
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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