NITRIDE SEMICONDUCTOR STRUCTURE, METHOD OF PRODUCING THE SAME, AND LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor structure with which a high-quality nitride semiconductor having less crystal dislocation density, no crack irrespective of formation of a thick nitride semiconductor and less mixed impurity can be epitaxially grown on a substrate having a lattice constant or a thermal expansion rate different from that of the nitride semiconductor without executing complicated two-stage growing, grooves of a plurality of directions are formed on the substrate to enable to promote the growing of the nitride semiconductor in a direction perpendicular to each of the grooves and to enable to reduce a piercing dislocation density.

SOLUTION: This nitride semiconductor structure has a substrate having a growth surface made of the same material and having a projection portion and a recess portion formed thereon; and a nitride semiconductor film grown at least on the projection portion of the growth surface. The recess portion is formed of linear grooves of a plurality of directions formed on the substrate.

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