| 摘要 |
<p>A method for forming semiconductor devices using a semiconductor substrate having first and second opposed surfaces and including first and second device regions includes directing a beam of laser light at the substrate such that the beam of laser light is focused within the substrate between the first and second surfaces thereof and the beam of laser light forms a thermally weakened zone (TWZ) in the substrate. The TWZ extends between the first and second device regions and defines a break line.</p> |
