发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of accurately detecting abnormalities during an EW operation and accurately testing an error process by outputting an operation state information indicating which of a plurality of operation stages is executed according to the progress of the operation stages. <P>SOLUTION: In the nonvolatile semiconductor memory device for executing a stored information writing or deleting operation by diving the operation into a plurality of operation stages by an internal control circuit and according to a predetermined algorithm, the internal control circuit outputs operation state information indicating which of the plurality of operation stages is executed according to the progress of the operation stages. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007133968(A) 申请公布日期 2007.05.31
申请号 JP20050326157 申请日期 2005.11.10
申请人 SHARP CORP 发明人 TONO HIROSHI
分类号 G11C16/06;G11C16/02 主分类号 G11C16/06
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