| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can suppress side etching of an upper layer of metallic wiring. <P>SOLUTION: In an upper layer main etching step for removing unnecessary parts of a Ti/TiN layer 16 and a BARC (bottom anti-reflective coating) layer 17, the etching rates of the Ti/TiN layer 16 and the BARC layer 17 are larger than the etching rate of an AlCu layer 15 as its etching conditions. When exposure of the AlCu layer 15 is detected, the upper layer main etching step is terminated and an upper layer overetching step is started. In the upper layer overetching step, as its etching conditions, the etching rates of the Ti/TiN layer 16 is made to nearly match the etching rate of the AlCu layer 15. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
