LATERAL JUNCTION FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a lateral junction field effect transistor which has a stable high withstanding voltage and a low on-resistance, and is downsized in its constitution. SOLUTION: The transistor comprises: a third p-type semiconductor layer 8 between a gate region layer 6 and a drain region layer 7; and a potential fixed layer 4 extending from an n-type epitaxial layer 3 to a p--type epitaxial layer 2. This improves the balance of a field distribution between the gate region layer 6 and the drain region layer 7. A channel region is located away from a high field drive region to make a low on-resistance and to downsize the lateral junction field effect transistor 100. COPYRIGHT: (C)2007,JPO&INPIT