| 摘要 |
A precharge circuit prevents voltage dropping of a local input/output line in a semiconductor memory apparatus. The precharge circuit includes at least one pair of pull-up and pull-down precharge circuits. When a local input/output line precharge signal is enabled, a precharge voltage to be applied to each of the precharge circuits is supplied to a local input/output line and a local input/output line-bar. The pull-up precharge circuit has P-type MOS transistors, and the pull-down precharge circuit has N-type transistors. With this configuration, dropping of precharge voltage levels of local input/output lines can be prevented, thus improving reliability of the memory apparatus.
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