HIGH PERFORMANCE FLASH MEMORY DEVICE USING A PROGRAMMING WINDOW FOR PREDETERMINATION OF BITS TO BE PROGRAMMED AND DC-TO-DC CONVERTER

摘要

A method is provided for programming a nonvolatile memory array including an array (102) of memory cells (201), where each memory cell (201) including a substrate (310), a control gate (328), a charge storage element (322), a source region (203) and a drain region (202). The method includes receiving a programming window containing a predetermined number of bits that are to be programmed in the array (700) and determining which of the predetermined number of bits are to be programmed in the memory array (703). The predetermined number of bits are simultaneously programmed to corresponding memory cells in the array (705). A programming state of the predetermined number of bits in the array is simultaneously verified (708).