| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof for controlling increase in manufacturing steps and manufacturing cost by facilitating lithography to form an element isolating region even through ultra-fine processes. <P>SOLUTION: A color insulating film 5 is formed to an internal wall of a trench TI where a trench capacitor is formed. Ions are guided to the part of the color insulating film 5 with ion implantation of an impurity into this trench TI from one diagonal direction. A part 5' of the color insulating film 5 to which the ions are guided is removed by etching utilizing difference in the etching rates. <P>COPYRIGHT: (C)2007,JPO&INPIT |
