METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To efficiently form an amorphous thin-film containing reduced amounts of impurities on a substrate without requiring a rapid thermal annealing process and frequent cleaning processes. SOLUTION: A method of manufacturing a semiconductor device comprises a film-forming step for forming a thin-film on a substrate by feeding a film-forming gas to the substrate and a film-refining step for refining the thin-film formed in the film-forming step by feeding a reactant in which an oxygen-containing gas has been activated to the substrate, wherein the both steps are conducted in a same reaction chamber and are consecutively repeated a plurality of times. The film-forming gas to be fed to the substrate in the film-forming process and the reactant to be fed to the substrate in the film-refining process are fed from a same feeding port into the reaction chamber. COPYRIGHT: (C)2007,JPO&INPIT