ONE TIME PROGRAMMABLE READ ONLY MEMORY

摘要

A one time programmable (OTP) transistor based electrically programmable read only memory (EPROM) cell (100) is disclosed. The cell includes multiple concentric rings (108, 110) from which gate structures are formed. An inner transistor based cell (130) formed from the inner ring is shielded from isolation material (106) by one or more outer rings. A lack of overlap between the inner transistor and isolation material promotes enhanced charge/data retention by avoiding high electric fields that may otherwise develop at such overlap regions.