| 摘要 |
PURPOSE:To specify crystal orientation of an orientation flat so that the interface level density is minimized when a MOSFET is formed on the side of hole by providing an orientation flat of crystal orientation <100> in an Si wafer of crystal face (100). CONSTITUTION:A linear orientation flat 2 of several tens of millimeters is provided in the crystal orientation <100> to the peripheral end part of a circular Si wafer surface 1 having the crystal face (100). Thereby, in the crystal face (100) Si wafer of crystal orientation <100>, the crystal face (100) mainly appears on the side surface of groove and in the case of forming vertically a MOSFET to the side wall part in the groove having the crystal face (100) on the side wall by forming an insulating film and a gate electrode, a MOSFET can be formed on the similar design criterion to the face (100) Si wafer surface, namely on the face (100).
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