| 摘要 |
A SEMICONDUCTOR MEMORY CELL COMPRISING (1) A FIRST TRANSISTOR OF A FIRST CONDUCTIVITY TYPE FOR READ OUT HAVING SOURCE/DRAIN REGIONS COMPOSED OF A SURFACE REGION OF A THIRD REGION AND A SECOND REGION AND A CHANNEL FORMING REGION COMPOSED OF A SURFACE REGION OF A FIRST REGION, (2) A SECOND TRANSISTOR OF A SECOND CONDUCTIVITY TYPE FOR WRITE - IN HAVING SOURCE /DRAIN REGIONS COMPOSED OF THE FIRST REGION AND A FOURTH REGION AND A CHANNEL FORMING REGION COMPOSED OF A SURFACE REGION OF THE THIRD REGION, AND (3) A JUNCTION - FIELD- EFFECT TRANSISTOR OF A FIRST CONDUCTIVITY TYPE FOR CURRENT CONTROL HAVING GATE REGIONS COMPOSED OF THE FOURTH REGION A PORTION OF THE FIRST REGION FACING THE FOURTH REGION, A CHANNEL REGION COMPOSED OF THE THIRD REGION SANDWICHED BY THE FOURTH REGION AND THE FIRST REGION AND SOURCE/ DRAIN REGIONS COMPOSED OF THE THIRD REGION.(FIG. 2)
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