| 摘要 |
PROBLEM TO BE SOLVED: To provide an element structure for improving the latch up operation of a vertical power IGBT. SOLUTION: The power IGBT includes a semiconductor substrate having an emitter zone 11 of a first conduction type and a drift zone 12 of a second conduction type proximate to the emitter zone 11, and a cell array having a plurality of transistor cells. The transistor cell has a source zone 15, a body zone 14 disposed between the source zone 15 and the drift zone 12, and a gate electrode 16 configured to be insulated with respect to the source zone 15 and the body zone 14, respectively. The source zone 15 and the body zone 14 are short-circuited. The emitter zone 11 has a lower emitter efficiency in a region corresponding to the second cell array section 102 than in a region corresponding to the first cell array section 101. The cell array has a first cell array section 101 with a first cell density and a second cell array section 102 with a second cell density that is lower than the first cell density. COPYRIGHT: (C)2007,JPO&INPIT
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