| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, along with a chemical solution used therefor, which suppresses excessive etching of the side wall of an insulating film which is damaged by etching, and also suppresses moisture absorption from the side wall. SOLUTION: The manufacturing method includes: a first process in which an insulating film 30 is provided on a base material 20 on which a mask material 40 is provided, wherein the insulating film is etched using the mask material, and a metal residue generated by the etching is removed. It also includes: a second process for hydrophobing the side wall of the insulating film formed by the etching, and a third process for removing a silicon residue generated by the etching of the insulating film. COPYRIGHT: (C)2007,JPO&INPIT
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