| 摘要 |
PURPOSE:To facilitate forming a high output type semiconductor laser chip and a low noise and low output type semiconductor laser on one main surface of a substrate in a monolithic structure by a method wherein 1st and 2nd deep trenches and 1st and 2nd shallow trenches extended along the 1st deep trench are formed and a double-hetero junction is formed by liquid phase epitaxy. CONSTITUTION:A high resistance current construction layer 2 is formed on one main surface of a substrate 1. Then, 1st and 2nd deep trenches 3 and 4 which are as deep as reaching the substrate 1 and are extended in parallel to each other and 1st and 2nd shallow trenches 5 and 6 which are not so deep as to reach the substrate 1 and are extended along and on both sides of the 1st deep trench 3 are formed in the surface of the current construction layer 2. Further, a double-hetero junction is formed on the current constriction layer 2 by liquid phase epitaxy. With this constitution, a high output type semiconductor laser chip and a low output type semiconductor laser chip can be formed simultaneously on one main surface of the substrate 1. |
