发明名称 |
Method for producing epitaxial wafer with buried diffusion layer and epitaxial wafer with buried diffusion layer |
摘要 |
There is disclosed a method for producing an epitaxial wafer with a buried diffusion layer comprising: implanting an impurity into a silicon single crystal wafer; subsequently diffusing the impurity in the wafer to form a diffusion layer; at least removing an oxide film on the diffusion layer; and thereafter forming a silicon epitaxial layer over the wafer to produce a silicon epitaxial wafer with a buried diffusion layer; wherein at least the oxide film on the diffusion layer is removed by etching with hydrofluoric acid to which a surfactant is added, and then the silicon epitaxial layer is formed. There can be provided a method for producing an epitaxial wafer with a buried diffusion layer in which generation of crystal defects in a silicon epitaxial layer is reduced effectively and an epitaxial wafer with a buried diffusion layer.
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申请公布号 |
US2007122990(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20060604345 |
申请日期 |
2006.11.27 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
TANAKA NORIMICHI;ITAMI TAKASHI;KOBAYASHI HIROYUKI |
分类号 |
H01L21/331;H01L29/00 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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