发明名称 |
Method and apparatus for forming a crystalline silicon thin film |
摘要 |
A hydrogen gas is supplied into a deposition chamber accommodating a silicon sputter target and a deposition target object, a high-frequency power is applied to said gas to generate plasma exhibiting Halpha/SiH* from 0.3 to 1.3 between an emission spectral intensity Halpha of hydrogen atom radicals at a wavelength of 656 nm and an emission spectral intensity SiH* of silane radicals at a wavelength of 414 nm in plasma emission, and chemical sputtering is effected on the silicon sputter target by the plasma to form a crystalline silicon thin film on the deposition target object. Thereafter a high-frequency power is applied to a terminally treating gas to generate plasma for terminating treatment and the surface of the crystalline silicon thin film is terminally treated by the plasma in the terminally treating chamber. |
申请公布号 |
US2007123004(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20060524449 |
申请日期 |
2006.09.21 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
TAKAHASHI EIJI;KAKI HIROKAZU |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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