METHOD OF FORMING SILICON FILM BY TWO STEP DEPOSITION

摘要

Disclosed is a method for forming a polycrystalline silicon through two-step deposition: supplying silicon precursor and plasma alternately to the inside of a plasma reaction tube to forming a crystalline silicon thin film of an atom layer at a lower temperature than 5000C; and forming a separate upper silicon thin film with the crystalline silicon thin film as a seed layer. The present invention can form a polycrystalline silicon thin film at relatively low temperature by the two-step deposition. The method of forming a polycrystalline silicon thin film by two-step deposition according to the present invention, comprises: sequentially supplying silicon precursors and reductive plasma into the inside of a reaction tube having a substrate placed therein to deposit a crystalline silicon thin film of atom layer having a predetermined thickness on the substrate; and depositing an upper silicon thin film on the crystalline silicon thin film functioning as a seed layer.