| 发明名称 |
VERFAHREN ZUR HERSTELLUNG VON EINEM DÜNNSCHICHTFELDEFFEKTTRANSISTOR |
| 摘要 |
All or a part of the thin films such as the silicon film, insulation film and conductive film are formed using liquid materials. The main method comprises forming a coating film by coating the liquid material on the substrate, and heat-treating the coating film for converting it into a desired thin film, thereby enabling the thin film transistor to be manufactured using a cheap manufacturing equipment. <IMAGE> |
| 申请公布号 |
DE60034406(D1) |
申请公布日期 |
2007.05.31 |
| 申请号 |
DE2000634406 |
申请日期 |
2000.03.29 |
| 申请人 |
SEIKO EPSON CORP. |
发明人 |
YUDASAKA, ICHIO;SHIMODA, TATSUYA;SEKI, SHUNICHI |
| 分类号 |
H01L29/12;C01G9/00;C01G45/00;C01G51/00;G02F1/1368;H01L21/208;H01L21/288;H01L21/316;H01L21/336 |
主分类号 |
H01L29/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
