MOS transistor with deformable gate

摘要

A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.