THIN-FILM FORMING APPARATUS

摘要

To provide a thin-film forming apparatus capable of forming a thin-film by bringing ions of some degree in plasma into contact with the thin-film. This thin-film forming apparatus (1) comprises a plasma generating means (80) disposed at a position corresponding to an opening (11a) of a vacuum chamber (11) for producing plasma in the vacuum chamber (11), a base plate holder (13) for holding a substrate in the vacuum chamber (11), and an ion quenching means (90) disposed between the plasma generating means (80) and the base plate holder (13). When the plasma generating means (80) are projected directly onto the base plate holder (13), the projection image of plasma generating means (80) shielded by the ion quenching means (90) has an area smaller than the residual image of plasma generating means (80) projected onto the base plate holder (13).