| 摘要 |
The present invention relates generally to an apparatus and a method for forming a pattern, and in particular, to an apparatus and a method for forming a pattern for the formation of quantum dots or wires having a nano or tens of nano meter order using the atomic array of a single or a poly crystalline material and to the manufacture of functional devices that have such a structure. The electron beam lithography method in accordance with the present invention uses the phase contrast atomic image of a single or a poly crystalline material itself. |
