METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING AN ELEVATED SOURCE/DRAIN

摘要

A method for manufacturing a field effect transistor having elevated source/drain regions is provided to easily fabricate a memory device having elevated source/drain which is sufficiently contacted with a gate spacer. A gate pattern(22) is formed on a substrate(20), and a gate spacer(24) is formed on a sidewall of the gate pattern. A first selective epitaxial growth process is performed on the substrate at a first temperature to form first thin films(26a',26b') which contact the gate spacer. A second selective epitaxial growth process is performed on the substrate at a second temperature which is lower than the first temperature to form second thin films(26a",26b") which contact the gate spacer. The first and second thin films are doped with impurities to form a source/drain.