| 摘要 |
PURPOSE:To suppress damage due to irradiation with ions and to gently slope the pattern edge of a thin film by etching the thin film through a resist as a mask, removing the pattern edge of the resist with oxygen plasma and etching the thin film again. CONSTITUTION:A thin Cr film 2 is laminated on a substrate 1 and a resist 3 is selectively left on the film 2. This film 2 is selectively etched and the pattern edge of the resist 3 is removed with oxygen plasma so that the resist 3 is made to stand back from the pattern edge of the film 2. The film 2 is then etched again to gently slope the pattern edge of the film 2. By this method, the reliability of a TFT device, a semiconductor device, etc., can be improved. |
