| 摘要 |
A method for fabricating a semiconductor device is provided to prevent phase change of a photoresist by carrying out an ion implantation process at a low ion implanting energy. An STI(Shallow Trench Isolation) oxide layer(113) is formed on a silicon substrate(111), and a gate insulation layer is formed on the silicon substrate having the STI oxide layer. A photoresist is applied on the substrate to form a photoresist pattern. The substrate is selectively implanted with N-type impurities and P-type impurities at an ion implanting energy of 0.5 mKeV or less to form each source/drain corresponding to an nMOS forming region and a pMOS forming region.
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