发明名称 Method of generating mask distortion data, exposure method and method of producing semiconductor device
摘要 The method involves obtaining one positional accuracy measurement mask and measuring positions of another and third masks of the former mask. A correlation function is calculated between positions of the latter and the third marks. Positions of the former mark are measured. Mask distortion data is generated on a thin film of a production mask from the positions of the former mark by using a correlation function. Independent claims are also included for the following: (a) an exposure method for exposing a pattern by using a production mask (b) a method of producing a semiconductor device.
申请公布号 EP1482374(A3) 申请公布日期 2007.05.30
申请号 EP20040012335 申请日期 2004.05.25
申请人 SONY CORPORATION 发明人 OMORI, SHINJI
分类号 G01B15/00;G03F9/00;G03C5/00;G03F1/38;G03F1/44;G03F7/20;G06F17/50;H01J37/305;H01L21/027 主分类号 G01B15/00
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