发明名称 METHOD FOR REPAIRING LITHOGRAPHY MASKS USING A CHARGED PARTICLE BEAM SYSTEM
摘要 <p>A method of enhancing charged particle beam etching particularly suitable for copper interconnects, includes milling at non-contiguous locations to prevent the formation or propagation of an etch-resistant region within the rastered area. Two or more milling boxes are typically performed, one or more of the boxes having pixel spacing greater than the spot size, with the last box using a conventional pixel spacing (default mill) smaller than the spot size to produce a uniform, planar floor of the etched area.</p>
申请公布号 EP1261752(B1) 申请公布日期 2007.05.30
申请号 EP20010914785 申请日期 2001.03.09
申请人 FEI COMPANY 发明人 FERRANTI, DAVID, C.;SZELAG, SHARON, M.;CASEY, JAMES, DAVID, JR.
分类号 C23C14/34;C23F1/04;G03F1/74;G06K19/00;H01J27/26;H01J37/08;H01J37/305;H01J37/317;H01L21/302 主分类号 C23C14/34
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