COATED COMPONENT CONSISTING OF QUARTZ GLASS, AND METHOD FOR PRODUCING SAID COMPONENT

摘要

#CMT# #/CMT# In a process to produce a quartz glass component for use in semiconductor manufacture, a quartz glass substrate is coated with slip containing amorphous SiO 2 particles and glazed prior to application of an SiO 2 glass mass with properties different from those of the substrate. #CMT# : #/CMT# The SiO 2 particles are in the range up to 500 mu m, most particles being in the range 1 mu m to 50 mu m and are produced by grinding action. The slurry is glazed by laser heating at a temperature range between 1100[deg]C and 1400[deg]C under hydrogen gas, followed by flame-drying. #CMT#USE : #/CMT# Process to produce a quartz glass component for use in apparatus for semiconductor manufacturing processes. #CMT#ADVANTAGE : #/CMT# The quartz glass has longer service life in semiconductor manufacture than prior art and has minimum particle impurities. Further claimed is that the quartz glass component has high resistance to etching fluids. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing is block diagram of the production sequence. (Drawing includes non English-language text). 11 : Amorphous quartz glass grains 12 : deionised water 16 : Al2O3 doping agent 13 : mixture 15 : needle growth inhibitor 14 : slip 20 : green body 21 : cast part 22 : blue body.