ELECTRICALLY EXASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY DEVICE AND ITS ERAOING METHOD AND ITS ERASING PROGRAMMING METHOD

摘要

PURPOSE: To enable data erasing and programming operations without disturbance of a memory cell by providing the first conductive type semiconductor substrate, the second conductive type drain and source region, the second conductive type channel region, the first insulating layer, the first conductive layer, the second insulating layer and the second conductive layer. CONSTITUTION: A memory cell of a semiconductor memory device having memory cell arrays is provided with the first conductive type semiconductor substrate 12, the second conductive type drain and source regions 14 and 16 arranged on the surface of the semiconductor substrate 12, and the second conductive type channel region 18 located on the surface of the substrate 12 between the regions 14 and 16. The memory cell is also provided with the first insulating layer 28 formed on a part of the drain region 14 and the channel region 18, the first conductive type layer 22 which is overlapped with a part of the drain region 14 on the first insulating layer 28, the second insulating layer 24 on the first conductive layer 22, and the second conductive layer 26, formed on the second insulating layer 24. As a result, the elimination and programming of word line unit can be conducted without disturbing other cells.