发明名称 Film-depositing target and preparation of phase shift mask blank
摘要 For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
申请公布号 EP1582921(A3) 申请公布日期 2007.05.30
申请号 EP20050252048 申请日期 2005.03.31
申请人 SHIN-ETSU CHEMICAL CO., LTD.;TOPPAN PRINTING CO., LTD. 发明人 YOSHIKAWA, HIROKI;ISHIHARA, TOSHINOBU;OKAZAKI, SATOSHI;INAZUKI, YUKIO;SAGA, TADASHI;OKADA, KIMIHIRO;IWAKATA, MASAHIDE;HARAGUCHI, TAKASHI;FUKUSHIMA, YUICHI
分类号 C23C14/06;C23C14/34;G03F1/32;G03F1/54;G03F1/68;H01L21/027 主分类号 C23C14/06
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