发明名称 MULTI-LAYER INTEGRATED CIRCUIT DEVICES
摘要 A multi-layer integrated circuit device comprises a plurality of superimposed insulating layers (1, 2, 3, 4) which carry signal tracks (S, SS) and power supply tracks (P, G) and a substrate (e.g. silicon) (5) which carries the superimposed insulating layers and the various circuit components of the device. Each layer of an adjacent pair of insulating layers (3, 4) carries relatively long signal tracks (S) interspersed in parallel relationship with power and ground tracks (P and G) with the tracks in the respective layers (3, 4) are disposed orthogonally relative to one another. The intersection points (7) of the effective power supply grid defined by the power and ground tracks (P, G) in the two layers (3, 4) are appropriately connected to the circuit components carried by the substrate (5) of the device. <IMAGE>
申请公布号 GB2215121(B) 申请公布日期 1991.03.13
申请号 GB19880002996 申请日期 1988.02.10
申请人 THE * PLESSEY COMPANY PLC;* GEC-MARCONI LIMITED 发明人 MICHAEL SIDNEY FRANCIS * DUNN;IAN * MITCHELL
分类号 H01L23/522 主分类号 H01L23/522
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